[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-6] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature (2)-

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:epitaxial silicon wafer, room templature bonding, oxygen diffusion

We have been studying the silicon wafers with proximity gettering sinks by implantation carbon-cluster ion for high performance CMOS imaging sensor.
When epitaxial layer is grown on silicon substrate, oxygen diffuse to epitaxial layer from silicon substrate.
Then, the defects formed by this remained oxygen remain in epitaxial layer. Thus, these defects might affect this device.
In this studying, in order that oxygen cannot diffuse to epitaxial layer from silicon substrate,
it is effective that epitaxial layer is bonded to high dose carbon-cluster ion implanted CZ-silicon substrate at room temperature.