[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

△ [15p-A23-7] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(3) - Development study of multi-element molecular ion implantation technique (2) -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO CORPORATION, 2.NISSIN ION EQUIPMENT CO,.LTD.)

Keywords:Carbon Cluster ion implantation, Molecular ion implantation, Getterion technique

We reported various characteristics of carbon-cluster ion implanted silicon wafers. We believe that these characteristics are able to contribute for improve characteristics of CMOS image sensors. For characteristics improvement of carbon-cluster ion implanted silicon wafers, we developed new molecular ion implantation technique, we call them “Multi-element Molecular Ion Implantation”. In the 63rd JSAP Spring Meeting, we reported implantation behavior by using this new technique. In this presentation, we will report the observation results of after epitaxial grows.