[15p-B10-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[15p-B10-13] Carbon Concentration in Silicon Film Grown in SiHCl₃-SiH_x-H₂ System

Ayumi Saito¹, 〇AYAMI YAMADA¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Silicon epitaxial growth rate, Trichlorosilane, SiHx

The silicon epitaxial film obtained from trichlorosilane and monomethylsilane gases were analyzed using the X-ray photoelectron spectrometry. Because the carbon concentration was less than detection limit, the carbon behavior has not influenced the growth rate increase.