The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 1:45 PM - 4:45 PM B3 (Exhibition Hall)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

3:00 PM - 3:15 PM

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi2 epitaxial films

〇Motoki Iinuma1, Naoki Murakoso1, Shuya Ikeda1, kazuya Ogi1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)

Keywords:semiconductor, silicide, electrical property