The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[15p-B9-1~17] 13.3 Insulator technology

Thu. Sep 15, 2016 1:15 PM - 5:45 PM B9 (Exhibition Hall)

Tsutomu Tezuka(TOSHIBA), Toyohiro Chikyo(NIMS)

5:15 PM - 5:30 PM

▲ [15p-B9-16] Reduction of slow trap density in Al2O3/n-Ge MOS interfaces by insertion of GeOxNy

〇Mengnan Ke1,2, Xiao Yu1,2, Mitsuru Takenaka1,2, Shinichi Takagi1,2 (1.Tokyo Univ., 2.JST-CREST)

Keywords:semiconductor