Investigation of process induced defects in 4H-SiC epitaxial layers

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 15, 2016 1:45 PM - 7:00 PM C302 (Nikko Houou)

5:30 PM - 5:45 PM

〇Kumiko Konishi¹, Ryusei Fujita¹, Yuki Mori¹, Akio Shima¹, Yasuhiro Shimamoto¹ (1.Hitachi, Ltd. R&D Group)

Keywords:SiC, defects, PL