[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-5] Mapping of 3C-SiC layers by using dual-focus scanning internal photoemission microscopy

〇Kenji Shiojima¹, Naoto Ichikawa², Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Keywords:dual-focus scanning internal photoemission microscopy, 3C-SiC

We propose a new mapping technique termed dual-focus scanning internal photoemission microscopy. We grew 3C-SiC on 4H-SiC and formed ohmic electrodes on the front and rear surfaces and Schottky contacts on the front surface. Photocurrent patterns consisting with domain boundaries were observed from both front and rear surfaces. We confirmed that this technique is useful to characterize both sides of a thin film nondestructively.