[15p-P6-1~16] 8.3 deposition of thin film and surface treatment

[15p-P6-6] Preparation of Si-DLC films by reactive HPPMS combined with bipolar pulse bias system

Hikaru Kamata¹, 〇Takashi Kimura¹, Setsuo Nakao², Kingo Azuma³ (1.NITech, 2.AIST, 3.Univ. Hyogo)

Keywords:Silicon Diamond-like carbon, Pulsed sputter plasmas

Si-DLC films with electrical conductivity were prepared by reactive high-power pulsed magnetron sputtering (HPPMS) combined with bipolar pulse bias system. Tetramethylsilane(TMS) gas was used as a reactive gas and was mixed to Ar gas in the range of mixing ratio lower than 5%. The fraction of the intensity related to the silicon component in the overall XPS spectrum was lower than 3%. The conductivity of the prepared films was on the order of 100 mS/cm.