〇(M2)kimitaka keya¹, Kazuma Tanaka¹, Takashi Kojima¹, Susumu Toko¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Nao Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

2:30 PM - 2:45 PM

△ [16p-B7-6] Relationship between electric field and cluster transportation in downstream of multi-hollow discharge plasmas

〇Takashi Kojima¹, Susumu Toko¹, Kimitaka Keya¹, Kazumaa Tanaka¹, Hyunwoohg Seo¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

2:45 PM - 3:00 PM

△ [16p-B7-7] Si epitaxial growth using on-site SiH₄ generator by narrow gap high density hydrogen plasma

〇(M1)Norihisa Takei¹, Fumiya Shinoda¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

3:00 PM - 3:15 PM

△ [16p-B7-8] Temperature dependence of surface nitriding characteristics of SiC by the irradiation of a remote nitrogen plasma

〇masaharu shimabayashi¹, kazuaki kurihara², koichi sasaki¹ (1.Hokkaido Univ., 2.IMEC/Toshiba)

3:30 PM - 3:45 PM

[16p-B7-9] Surface modification and improvement of shear strength by plasma treatment

〇Nobutaka Araoka¹, Kenichi Yamazaki¹, Takanori Iijima¹, Takeshi Imamura¹, Hiroyuki Yasui¹ (1.Toshiba)

3:45 PM - 4:00 PM

[16p-B7-10] Investigation of causes to improve mechanical strength of polyurethane-film containing plasma-treated mult-wall carbon nanotube

〇(M1)Akiya Yoshida¹, Daisuke Ogawa¹, Keiji Nakamura¹ (1.Chubu Univ.)

4:00 PM - 4:15 PM

[16p-B7-11] Radicals and ions behavior analysis by Plasma Indicator

〇Keita Hishikawa¹, Yu Yamakawa¹, Hiroaki Takeoka¹, Keiko Nakamura¹, Kazuhiro Uneyama¹ (1.Sakura Color Products Corp)

4:15 PM - 4:30 PM

[16p-B7-12] Development of Neutral nitriding equipment

〇Yoshiki Handa¹, Petros Abraha¹ (1.Meijo Univ.)

4:30 PM - 4:45 PM

[16p-B7-13] Improved adhesion property of c-BN films by plasma-enhanced nitridation under Reactive Plasma-Assisted Coating (RePAC)

〇Masao Noma¹, Michiru Yamashita², Koji Eriguchi³, Shigehiko Hasegawa⁴ (1.SHINKO SEIKI. Co., LTD., 2.Hyogo Prefectural Institute of Technology, 3.Kyoto Univ., 4.Osaka Univ.)

Poster presentation

[15p-P6-1~16] 8.3 deposition of thin film and surface treatment

Thu. Sep 15, 2016 1:30 PM - 3:30 PM P6 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[15p-P6-1] Sputter-deposition of NdFeB/Ta magnetic thin films using Sputtering

Kota Kodama¹, Tomohiro Himaki¹, Masanori Shinohara¹, 〇Yoshinobu Matsuda¹ (1.Nagasaki Univ.)

1:30 PM - 3:30 PM

△ [15p-P6-2] Heat influx to substrate in high power impulse magnetron sputtering

〇Katsuhiro Hattori¹, Takayuki Ohta¹, Akinori Oda², Hiroyuki Kousaka³ (1.Meijo Univ., 2.Chiba Inst. Tech., 3.Nagoya Univ.)

1:30 PM - 3:30 PM

△ [15p-P6-3] Formation of Cu Film by Applying RF Substrate Bias to Ion Beam Sputtering Using ECR-MW Plasma Source

〇Toru Harigai¹, Masafumi Yamano¹, Takahiro Imai¹, Yushi Iijima¹, Ryo Isono¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹ (1.Toyohashi Univ. Technol.)

1:30 PM - 3:30 PM

[15p-P6-4] Low-temperature Deposition of Nitride Thin Films with Plasma Enhanced Reactive DC Pulsed Magnetron Sputtering

〇Kosuke Takenaka¹, Yoshikatsu Satake¹, Giichiro Uchida¹, Yuichi Setsuhara¹ (1.Osaka Univ.)

1:30 PM - 3:30 PM

[15p-P6-5] Preparation of hydrogen embrittlement resistance thin films by plasma process and their properties I

〇Hiroharu Kawasaki¹, Tamiko Ohshima¹, Hoshihio Yagyu¹, Takeshi Ihara¹, Hiroshi Nishiguchi¹ (1.Nat'l. Ins. Tech, Sasebo College)

1:30 PM - 3:30 PM

[15p-P6-6] Preparation of Si-DLC films by reactive HPPMS combined with bipolar pulse bias system

Hikaru Kamata¹, 〇Takashi Kimura¹, Setsuo Nakao², Kingo Azuma³ (1.NITech, 2.AIST, 3.Univ. Hyogo)

1:30 PM - 3:30 PM

[15p-P6-7] Evaluation of Oxygen Negative Ion Flux in ITO Magnetron Sputtering

〇Taku Suyama¹, Bae Hansin¹, Setaka Kenta¹, Kensuke Sasai¹, Haruka Suzuki¹, HIrotaka Toyoda^1,2 (1.Nagoya Univ., 2.PLANT, Nagoya Univ.)

1:30 PM - 3:30 PM

[15p-P6-8] Effect of Plasma Jet Pretreatment on the Surface Formation of Cs Adsorbed Thermionic Emitter

〇Kenjiro Murata¹, Akihisa Ogino¹, Naoya Morioka², Yuji Kimura² (1.Shizuoka Univ., 2.DENSO CORP.)

1:30 PM - 3:30 PM

△ [15p-P6-9] Surface Roughening of Aluminum by Atomospheric Pressure Jet and Its Adhesion Property between Resin and Aluminum

〇Hiroto Nito¹, Kouta Imamura¹, Kunio Hayakawa¹, Masaaki Nagatsu^1,2 (1.ShizuokaUniv., 2.Shizuoka Univ.)

1:30 PM - 3:30 PM

[15p-P6-10] Development of high-speed jet pulsed plasma source for surface treatment

〇Daisuke Ogasawara¹, Hiroaki Kawano¹, Ken Kakegawa¹, Hidekazu Miyahara¹, Akitoshi Okino¹ (1.Tokyo Tech FIRST)

1:30 PM - 3:30 PM

△ [15p-P6-11] Development of Multifunctional Biosensor Using Capillary Atmospheric Pressure Plasma Jets

〇Masahiro Kimpara¹, Tomy Abuzairi^2,3, Masaaki Nagatsu^1,2 (1.Shizuoka Univ., 2.Shizuoka Univ, 3.Universitas Indonesia)

1:30 PM - 3:30 PM

△ [15p-P6-12] Surface Modification of Graphite-encapsulated Magnetic Nanoparticles with Carboxyl Groups by Ar/H₂O Gas Mixture RF Plasma and Its Quanititative Evaluation

〇Takuya Omura¹, Anchu Viswan², Masaaki nagatsu² (1.ShizuokaUniv., 2.Shizuoka Univ.)

1:30 PM - 3:30 PM

[15p-P6-13] Surface Treatment of Semiconductor Thermionic Emitter Using Ar/O₂Mixed Surface-wave Plasma

〇takatoshi watanabe¹, Yoshiki Nakano¹, Akihisa Ogino¹, Naoya Morioka², Yuji Kimura² (1.Shizuoka Univ., 2.DENSO CORP.)

1:30 PM - 3:30 PM

[15p-P6-14] Effects of ZnO(N) thin film by inductively coupled plasma-assisted sputtering

〇Yuki Ishii¹, Seiya sakakibara¹, Tetsuya Kaneko¹, Kunio Okimura¹, Haruo Shindo¹, Maso Isomura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[15p-P6-15] DLC On-site Deposition by Atmospheric-Pressure Pen-like Plasma

〇Hiroyuki Yoshiki¹, Yuma Sagai^1,2 (1.Tsuruoka NCT, 2.Orix Facil.)

1:30 PM - 3:30 PM

△ [15p-P6-16] Fabrication of amino-functionalized Au nanoparticles by NH3 added He/CH4
DC arc discharges

〇Taiki Furukawa¹, Hu Rui², Masaaki Nagatsu^1,2 (1.Shizuoka Univ., 2.Shizuoka University)

Sessions

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[16p-B7-1~13] 8.3 deposition of thin film and surface treatment

[16p-B7-1] Diamond growth with pulsed-microwave plasma chemical vapor deposition -2

[16p-B7-2] Film Thickness Distribution Analysis of DC Magnetron Sputtering with Electromagnetic Field Simulation

[16p-B7-3] Comparison of hybrid facing-target sputtering and conventional facing-target sputtering in fabrication of ITO thin films

[16p-B7-4] SiO₂ Film Deposition by O₂/TEOS Slot Type Microwave Plasma CVD

△ [16p-B7-5] Influence of interfaces on Si-H₂/Si-H bond ratio of inrrinsic a-Si:H on p-layer

△ [16p-B7-6] Relationship between electric field and cluster transportation in downstream of multi-hollow discharge plasmas

△ [16p-B7-7] Si epitaxial growth using on-site SiH₄ generator by narrow gap high density hydrogen plasma

△ [16p-B7-8] Temperature dependence of surface nitriding characteristics of SiC by the irradiation of a remote nitrogen plasma

[16p-B7-9] Surface modification and improvement of shear strength by plasma treatment

[16p-B7-10] Investigation of causes to improve mechanical strength of polyurethane-film containing plasma-treated mult-wall carbon nanotube

[16p-B7-11] Radicals and ions behavior analysis by Plasma Indicator

[16p-B7-12] Development of Neutral nitriding equipment

[16p-B7-13] Improved adhesion property of c-BN films by plasma-enhanced nitridation under Reactive Plasma-Assisted Coating (RePAC)

[15p-P6-1~16] 8.3 deposition of thin film and surface treatment

[15p-P6-1] Sputter-deposition of NdFeB/Ta magnetic thin films using Sputtering

△ [15p-P6-2] Heat influx to substrate in high power impulse magnetron sputtering

△ [15p-P6-3] Formation of Cu Film by Applying RF Substrate Bias to Ion Beam Sputtering Using ECR-MW Plasma Source

[15p-P6-4] Low-temperature Deposition of Nitride Thin Films with Plasma Enhanced Reactive DC Pulsed Magnetron Sputtering

[15p-P6-5] Preparation of hydrogen embrittlement resistance thin films by plasma process and their properties I

[15p-P6-6] Preparation of Si-DLC films by reactive HPPMS combined with bipolar pulse bias system

[15p-P6-7] Evaluation of Oxygen Negative Ion Flux in ITO Magnetron Sputtering

[15p-P6-8] Effect of Plasma Jet Pretreatment on the Surface Formation of Cs Adsorbed Thermionic Emitter

△ [15p-P6-9] Surface Roughening of Aluminum by Atomospheric Pressure Jet and Its Adhesion Property between Resin and Aluminum

[15p-P6-10] Development of high-speed jet pulsed plasma source for surface treatment

△ [15p-P6-11] Development of Multifunctional Biosensor Using Capillary Atmospheric Pressure Plasma Jets

△ [15p-P6-12] Surface Modification of Graphite-encapsulated Magnetic Nanoparticles with Carboxyl Groups by Ar/H₂O Gas Mixture RF Plasma and Its Quanititative Evaluation

[15p-P6-13] Surface Treatment of Semiconductor Thermionic Emitter Using Ar/O₂Mixed Surface-wave Plasma

[15p-P6-14] Effects of ZnO(N) thin film by inductively coupled plasma-assisted sputtering

[15p-P6-15] DLC On-site Deposition by Atmospheric-Pressure Pen-like Plasma

△ [15p-P6-16] Fabrication of amino-functionalized Au nanoparticles by NH3 added He/CH4
DC arc discharges

Authentication

Sessions

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[16p-B7-1~13] 8.3 deposition of thin film and surface treatment

△ [16p-B7-5] Influence of interfaces on Si-H2/Si-H bond ratio of inrrinsic a-Si:H on p-layer

△ [16p-B7-6] Relationship between electric field and cluster transportation in downstream of multi-hollow discharge plasmas

△ [16p-B7-7] Si epitaxial growth using on-site SiH4 generator by narrow gap high density hydrogen plasma

△ [16p-B7-8] Temperature dependence of surface nitriding characteristics of SiC by the irradiation of a remote nitrogen plasma

[15p-P6-1~16] 8.3 deposition of thin film and surface treatment

△ [15p-P6-2] Heat influx to substrate in high power impulse magnetron sputtering

△ [15p-P6-3] Formation of Cu Film by Applying RF Substrate Bias to Ion Beam Sputtering Using ECR-MW Plasma Source

△ [15p-P6-9] Surface Roughening of Aluminum by Atomospheric Pressure Jet and Its Adhesion Property between Resin and Aluminum

△ [15p-P6-11] Development of Multifunctional Biosensor Using Capillary Atmospheric Pressure Plasma Jets

△ [15p-P6-12] Surface Modification of Graphite-encapsulated Magnetic Nanoparticles with Carboxyl Groups by Ar/H2O Gas Mixture RF Plasma and Its Quanititative Evaluation

△ [15p-P6-16] Fabrication of amino-functionalized Au nanoparticles by NH3 added He/CH4DC arc discharges

Authentication

△ [16p-B7-5] Influence of interfaces on Si-H₂/Si-H bond ratio of inrrinsic a-Si:H on p-layer

△ [16p-B7-7] Si epitaxial growth using on-site SiH₄ generator by narrow gap high density hydrogen plasma

△ [15p-P6-12] Surface Modification of Graphite-encapsulated Magnetic Nanoparticles with Carboxyl Groups by Ar/H₂O Gas Mixture RF Plasma and Its Quanititative Evaluation

△ [15p-P6-16] Fabrication of amino-functionalized Au nanoparticles by NH3 added He/CH4
DC arc discharges