[16p-B7-1~13] 8.3 deposition of thin film and surface treatment

△ [16p-B7-8] Temperature dependence of surface nitriding characteristics of SiC by the irradiation of a remote nitrogen plasma

〇masaharu shimabayashi¹, kazuaki kurihara², koichi sasaki¹ (1.Hokkaido Univ., 2.IMEC/Toshiba)

Keywords:SiC, nitriding, semiconductor

We previously reported that SiC surface irradiated by remote nitrogen plasma at a temperature below -110 ^oC had nitride layer with no oxygen. In this talk, we report the comparison between the SiC surfaces irradiated by remote nitrogen plasmas at room temperature, -60 ^oC, and a temperature bellow -110 ^oC. In addition, we report the morphology of the SiC surface irradiated by remote nitrogen plasma.