The 77th JSAP Autumn Meeting, 2016

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Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-A22-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A22 (Main Hall B)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.)

9:45 AM - 10:00 AM

[16a-A22-4] Comparison of Optical Constants in β-Ga2O3 Films and Single Crystal

〇Takeyoshi Onuma1,2, Shingo Saito2, Kohei Sasaki3,2, Tatekazu Masui3, Tomohiro Yamaguchi1, Tohru Honda1, Akito Kuramata3, Masataka Higashiwaki2 (1.Kogakuin Univ., 2.NICT, 3.Tamura Corp.)

Keywords:Gallium Oxide, Spectroscopic ellipsometry, Monoclinic crystal

Comparison of optical constants in β-Ga2O3 films and single crystal, which were determined using the spectroscopic ellipsometry measurements will be discussed.