[16a-A24-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

[16a-A24-5] Nip a-Si:H and multi-junction thin-film silicon solar cells grown with triode PECVD

〇Hitoshi Sai¹, Takuya Matsui¹, Koji Matsubara¹ (1.AIST)

Keywords:solar cell, silicon, thin film

Recently we reported the world-record stabilized efficiency of 13.6% in a nip-type triple-junction thin-film silicon solar cell. However, there was large room for improvement in the top a-Si:H cell. In addition, triode PECVD method, which is known to be effective to mitigate the light-induced degradation in a-Si:H, has not applied yet. In this report, we show the effects of oxide-based p- and buffer layers as well as the impact of triode PECVD, aiming to improve the efficiency in nip a-Si:H cells and multi-junction cells.