[16a-A35-1~10] 3.13 Semiconductor optical devices

[16a-A35-5] Improvement of dark current in c-Se-based photodiode by reducing the thickness of adhesion layer

〇Shigeyuki Imura¹, Keitada Mineo¹, Honda Yuki¹, Hagiwara Kei¹, Watabe Toshihisa¹, Miyakawa Kazunori¹, Namba Masakazu¹, Ohtake Hiroshi¹, Kubota Misao¹ (1.NHK STRL)

Keywords:crystalline selenium, photodiode, image sensor

Because of the reduced pixel size of the CMOS image sensors, the amount of light received per pixel has decreased. We are aiming to develop the high-sensitivity image sensor overlaid with a thin-film photoconversion layer. We previously demonstrated the CMOS image sensor overlaid with c-Se-based photodiode, and successfully captured a clear image. In this study, we report the reduction of dark current by decreasing the thickness of tellurium (Te) layer, which acts as an adhesion layer.