[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [16a-B1-10] Impact of deposition temperature of Al based gate insulators in AlGaN/GaN MOS-HEMTs

〇(M1)Kenta Watanabe¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

Keywords:semiconductor, Galium Nitride