11:30 AM - 11:45 AM
△ [16a-B1-10] Impact of deposition temperature of Al based gate insulators in AlGaN/GaN MOS-HEMTs
Keywords:semiconductor, Galium Nitride
Oral presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)
Taketomo Sato(Hokkaido Univ.)
11:30 AM - 11:45 AM
Keywords:semiconductor, Galium Nitride