11:15 AM - 11:30 AM
[16a-B1-9] Temperature dependence of Hall-effect measurement for Mg-doped p-type GaN and experimental estimation of effective density of states in valence band
Keywords:gallium nitride, Hall effect, effective density of states
We have investigated growth of lightly Mg-doped p-type homoepitaxially on free-standing GaN substrate by MOVPE and its characterization to obtain fundamental properties which are essential for the design of vertical GaN power devices. We performed Hall-effect measurement for p-GaN with the Mg concentration range from 6.5×1016 to 2.3×1018 cm-3 at the temperature range from 130 to 660K. Temperature dependence of Hall hole concentration of these samples reveals the effective density of states in valence band (NV).