The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Taketomo Sato(Hokkaido Univ.)

11:00 AM - 11:15 AM

[16a-B1-8] ALD Temperature Dependence of Surface Potential Fluctuation at GaN MOS Interfaces

〇Noriyuki Taoka1, Toshiharu Kubo2, Toshikazu Yamada1, Takashi Egawa2, Mitsuaki Shimizu1 (1.AIST, 2.Nagoya Inst. Tech)

Keywords:GaN, MOS interface, surface potential fluctuation