[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

[16a-B1-9] Temperature dependence of Hall-effect measurement for Mg-doped p-type GaN and experimental estimation of effective density of states in valence band

〇Masahiro Horita¹, Shinya Takashima², Ryo Tanaka², Katsunori Ueno², Masaharu Edo², Tokio Takahashi³, Mitsuaki Shimizu³, Jun Suda³ (1.Kyoto Univ., 2.Fuji Electric, 3.AIST)

Keywords:gallium nitride, Hall effect, effective density of states

We have investigated growth of lightly Mg-doped p-type homoepitaxially on free-standing GaN substrate by MOVPE and its characterization to obtain fundamental properties which are essential for the design of vertical GaN power devices. We performed Hall-effect measurement for p-GaN with the Mg concentration range from 6.5×10¹⁶ to 2.3×10¹⁸ cm^-3 at the temperature range from 130 to 660K. Temperature dependence of Hall hole concentration of these samples reveals the effective density of states in valence band (N_V).