[16a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16a-B10-10] Investigation of Etching Mechanism of Germanium by Chlorine Neutral Beam

〇Shuichi Noda¹, En-Tzu Lee¹, Wataru Mizubayashi², Kazuhiko Endo², Seiji Samukawa^1,2 (1.Tohoku Univ., 2.AIST)

Keywords:Ge Fin-FET, Neutral Beam Etching, Etching Mechanism