[16a-B10-1~13] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[16a-B10-13] Investigation of productivity in device process of minimal fab

〇Khumpuang Sommawan^1,2、Imura Fumito^1,2、Hara Shiro^1,2 (1.AIST、2.MINIMAL)

キーワード：semiconductor manufacturing, MOSFET

The result of MOSFET fabrication using minimal fab's clean-localized system confirms the clean-performance of the system. We have measured the clean levels in process chamber of a machine and the wafer transfer system. Both are resulting in ISO class 4, while the clean level of the circumstance is in ISO class 9. We fabricate a traditional MOSFET using minimal fab for the entire process. The measured density of interface states obtained of the MOSFET was 7.7x10^10 cm^-2 and an off-leak current was 4x10^-12A which is acceptable contamination level of the system. Due to a compact size of the minimal machine, the wafer transfer distance is minimized. The process efficiency in terms of wafer transfer time and wafer waiting time is analyzed.