Evaluation of Filled Defects in Thermally-grown Oxide on Si and C Faces of 4H-SiC by Using Total Photoelectron Yield Spectroscopy

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 16, 2016 9:00 AM - 12:15 PM C302 (Nikko Houou)

Koji Kita(Univ. of Tokyo)

9:45 AM - 10:00 AM

〇Hiromasa Watanabe¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:4H-SiC, PYS