[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-5] Comparison between dry and wet oxide on (000-1)4H-SiC MOSFETs studied by electrically detected magnetic resonance

〇(D)Yohei Kagoyama¹, Mitsuo Okamoto², Hironori Yoshioka², Shinsuke Harada², Takahiro Yamasaki³, Takao Ohno³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

Keywords:4H-SiC, MOSFET, interface defect

We compared dry-oxide and wet-oxide (000-1)C-face 4H-SiC MOSFETs using electrically detected magnetic resonance (EDMR) spectroscopy. EDMR signals of dry-oxide and wet-oxide MOSFETs were different, which means the interface defects at dry oxide are different from ones at wet oxide. We are going to discuss their microscopic structures at this presentation.