Simulation analysis of an effect on electrical charactaristics of SiC-MOSFET by donor-type trap near conduction band edge

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 16, 2016 9:00 AM - 12:15 PM C302 (Nikko Houou)

Koji Kita(Univ. of Tokyo)

11:00 AM - 11:15 AM

〇Shuhei Oketa¹, Tadashi Nishimura¹, Yoshinari Kamakura¹ (1.Osaka Univ.)

Keywords:SiC, device simulation