[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-9] Analysis of SiC MOS interface by impedance measurements considering series resistance

〇Dai Okamoto¹, XuFang Zhang¹, Tetsuo Hatakeyama², Mitsuru Sometani², Shinsuke Harada², Ryoji Kosugi², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.U. Tsukuba, 2.AIST)

Keywords:silicon carbide, oxide, interface states

It is necessary for considering a series resistance for the frequency analysis of capacitance and conductance in the SiC MOS interface. In this work, a new correction method, which has been used for the characterization of III-V MIS interfaces, was applied to the SiC MOS interface. After correcting the capacitance and conductance measured in the accumulation condition, we confirmed the frequency dependence in the capacitance and conductance. We suggest that this frequency dependence is due to the frequency response of the near-interface traps.