Effect of Capping Layer on Thermal Oxidation of GaN Surface

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

Kozo Makiyama(Fujitsu Lab.)

2:15 PM - 2:30 PM

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:GaN, Power device