Improved Interface Properties of SiO<sub>2</sub>/GaN MOS Capacitor by Interfacial GaO<sub>x</sub> Formation with Post-oxidation Treatment

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

Kozo Makiyama(Fujitsu Lab.)

2:30 PM - 2:45 PM

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

Keywords:GaN, Power device