[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [16p-B1-6] Characterization of Al₂O₃/GaN structures using n-GaN layer grown on GaN substrate

〇Shota Toiya¹, Tamotsu Hasizume¹ (1.Hokkaido Univ.)

Keywords:gallium nitride, GaN