[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [16p-B1-9] Study on photo-electrochemical response property of AlGaN/GaN hetero-structure and its application to low damage etching technology

〇Yusuke Kumazaki¹, Keisuke Uemura¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

Keywords:electrochemical etching, AlGaN/GaN HEMT, power device

In this study, we aimed to develop low damage etching process by using electrochemical reaction to improve performance of recessed-gate AlGaN/GaN HEMT. Photo-electrochemical characterization revealed that there were differences in supply process of carriers contributed to electrochemical reactions by applied voltage and wavelength of irradiation light. By managing supply process of carriers, we could suppress local etching, resulted in improved uniformity and controllability. This result indicates that electrochemical etching process is very promising to fabricate recessed-structure with low-damage and high-controllability.