[16p-B10-1~12] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16p-B10-1] Development and Characterization of Process Cutting Half-inch Wafers off a Large Wafer

〇Norio Umeyama^1,2, Takaaki Sakai³, Atsushi Kajikura³, Kouichiro Ichikawa³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.Fujikoshi Machinery)

Keywords:minimal, wafer

A method for forming half-inch wafers and its wafer characterization are reported. For the half-inch, the proportion of the wafer edge is large. Since the edge shape affects in a process such as cleaning or resist coating, variously changing the edge shape was optimized. Also not cut out from the small diameter of the crystal, it was developed the process cutting out from a large wafer. We report a cutting process for Si, SOI, GaAs, Ga₂O₃, and the analysis results of the impurities for the Si wafer.