The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16p-B10-1~12] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Fri. Sep 16, 2016 1:45 PM - 5:00 PM B10 (Exhibition Hall)

Minoru Sasaki(Toyota Tech. Inst.), Kuniyuki Kakushima(Titech)

2:30 PM - 2:45 PM

[16p-B10-4] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater (7)

NING LI1, MIYA MATSUO1, HITOSHI HABUKA1, TAKANORI MIKAHARA2, SHIN-ICHI IKEDA2,3, YUUKI ISHIDA2,3, SHIRO HARA2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:Minimal manufacturing, Silicon epitaxy, Thermal transport

The thermal transport in the chemical vapor deposition reactor for the Minimal Manufacturing was analyzed using the numerical calculation. The inlet gas velocity governs the entire gas flow. The wafer rotation also has a considerable influence on the gas phase temperature.