[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-1] [Young Scientist Presentation Award Speech] Impacts on SiC MOSFET mobility of high temperature annealing in oxidizing or reducing ambient before gate oxide growth

〇Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:SiC, MOS, mobility

Recently it has been pointed out that properties of SiC substrate are affected by annealing at high temperature. In this study, we investigagted the impacts of high temperature annealing before gate oxide growth on SiC MOSFET mobility. As a result, a degradation of SiC MOSFET mobility was observed only for annealing in oxidizing ambient. Thermal desorption spectroscopy analysis revealed that accumulation of oxygen into SiC substrate would explain the degradation of the mobility.