[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-4] Characterization of Traps at Nitrided SiO₂/ SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

〇Tetsuo Hatakeyama¹, Yuji Kiuchi¹, Mitsuru Sometani¹, Dai Okamoto², Shinsuke Harada¹, Hiroshi Yano², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Tsukuba Univ.)

Keywords:Interface states, mobility, Nitridation

Traps at Nitrided SiO₂/ SiC Interfaces near the Conduction Band Edge were charactrized by using Hall Effect Measurements. The characterized results showed following results. (1) Nitridation reduces the density of interface states near the conduction band. (2) The effect of nitridation depends on the crystal faces. (3) Nitridation fot 120 minites in NO inreduces the Hall mobility in SiO₂/ SiC Interfaces on Si-face.