The 77th JSAP Autumn Meeting, 2016

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 16, 2016 1:45 PM - 4:15 PM C302 (Nikko Houou)

Dai Okamoto(Univ. of Tsukuba)

2:15 PM - 2:30 PM

[16p-C302-3] Study on wet-oxidized 4H-SiC m-face MOS interface by SiO2 microscopic structure and electric characteristics

〇Kohei Kuroyama1, Hirohisa Hirai1, Kensaku Yamamoto2, Mariko Hayashi2, Koji Kita1 (1.Tokyo Univ., 2.DENSO CORP.)

Keywords:SiC