[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-9] Electrical characteristics of SiC-MOS capacitor with La-silicate/ALD-SiO₂ stacked gate dielectrics

〇Iimin Rei¹, Hitoshi Wakabayashi¹, Kataoka Yoshinori², Hiroshi Iwai², Kuniyuki Kakushima¹, Masayuki Furuhashi³, Shingo Tomohisa³, Satoshi Yamakawa³ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR, 3.Mitsubishi Electric Corp.)

Keywords:SiC, La-silicate, TDMAS