11:30 AM - 11:45 AM ▼ [21a-S422-8] Realization of Ge n- and p-MOSFETs by using low thermal budget ionimplantation after germanidation technique (< 400 °C) 〇(P)WENHSIN CHANG1, Hiroyuki Ota1, Tatsuro Maeda1 (1.AIST)