14:00 〜 14:15 ▲ [20p-S221-2] Improvement of MOS Interfaces of La2O3/InGaAs by Ultra-thin ALD Al2O3 Capping Layers 〇(D)張 志宇1,2、竹中 充1,2、高木 信一1,2 (1.東大院工、2.JST-CREST)