Takuya Hoshi

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

△ [20p-P9-17] A method for reducing specific base contact resistivity of InGaAsSb/InP DHBTs

〇Takuya Hoshi¹, Norihide Kashio², Yuta Shiratori¹, Hiroki Sugiyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs, 2.NTT Device Innovation Center)

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