[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

△ [20p-P9-17] A method for reducing specific base contact resistivity of InGaAsSb/InP DHBTs

〇Takuya Hoshi¹, Norihide Kashio², Yuta Shiratori¹, Hiroki Sugiyama¹, Kenji Kurishima¹, Minoru Ida¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs, 2.NTT Device Innovation Center)

Keywords:InGaAsSb,MOCVD,DHBT