Yoshimi Yamashita

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[20p-P9-2] Device performance of InAlN/AlN/GaN HEMTs on free-standing GaN substrate

〇Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endho^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (1.NICT, 2.Fujitsu Lab.)