Kohji Inagaki

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[20p-P9-21] Analysis of reaction mechanism in Catalyst-referred etching of GaN surface - Atomic structure of H₂O surface termination around GaN surface kink -

〇Kohji Inagaki¹, Pho Van Bui¹, Ai Isohashi¹, Daisetsu Toh¹, Yoshitada Morikawa¹, Kazuto Yamauchi¹ (1.Osaka Univ.)