[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

[20p-P9-21] Analysis of reaction mechanism in Catalyst-referred etching of GaN surface - Atomic structure of H₂O surface termination around GaN surface kink -

〇Kohji Inagaki¹, Pho Van Bui¹, Ai Isohashi¹, Daisetsu Toh¹, Yoshitada Morikawa¹, Kazuto Yamauchi¹ (1.Osaka Univ.)

Keywords:CARE,catalyst-referred etching,GaN

Kinked 3c-GaN(111) surface models are built to analze CARE process by first-principles calculations. The termination atomic structure of Ga surface is rather complicated, but known as 3/4 of Ga surface of GaN are terminated by OH and the rest are terminated by H₂O. The H atoms in the H₂O termination are mobile and probablely contribute reducing reaction barrier. The dependency of energy on relative position of H₂O termination site is analyzied.