Shougo Ueda

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[20p-P9-1~22] 13.8 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[20p-P9-8] Characterization of traps induced by hydrogen implantation in n-GaN

〇(M1)Shougo Ueda¹, Masahiro Goto¹, Kota Takabayashi¹, Yutaka Tokuda¹, Kenji Shiojima², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tecnol., 2.Fukui University, 3.S. H. I. Examination & Inspection, Ltd.)

Mon. Mar 21, 2016 9:00 AM - 12:15 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21a-W541-1~12] 13.8 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

[21a-W541-10] Constant capacitance DLTS measurements of MOCVD n-GaN with high ratios of N_t/N_d

〇(M1)Shougo Ueda¹, Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tecnol.)

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