5:00 PM - 5:15 PM
[20p-S423-13] High activation in n+/p Ge and formation of shallow junction by Flash Lamp Anneal(FLA)
〇Hideaki Tanimura1, Hikaru Kawarazaki1, Yukio Ono1, Takahiro Yamada1, Shinichi Kato1, Takayuki Aoyama1, Ippei Kobayashi1 (1.SCREEN Semiconductor Solutions)