Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sun. Mar 20, 2016 1:45 PM - 6:45 PM S423 (S4)

Seiichiro Higashi(Hiroshima Univ.), Akito Hara(Tohoku Gakuin Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

△ [20p-S423-1] Fabrication of single-crystalline LLPE-GeSn layer on quartz substrate by rapid thermal annealing and its MOSFET characteristics

〇Masahiro Koyama¹, Hiroshi Oka¹, Takashi Amamoto¹, Kohei Tominaga¹, Shogo Tanaka¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

2:00 PM - 2:15 PM

[20p-S423-2] Crystallization and Activation of P+ dope a-Ge film by Atmospheric Pressure Micro-Thermal-Plasma-Jet

〇Hiromu Harada², Nakatani Taichi¹, Shin Ryota¹, Higashi Seiichiro¹ (1.AdSM, 2.Hiroshima Univ.)

2:15 PM - 2:30 PM

△ [20p-S423-3] Self-Aligned Planar Metal Double Gate Low-Temperature thin Poly-Ge TFTs on a Glass Substrate

〇Yuya Nishimura¹, Takuya Nakashima¹, Makoto Mori¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

2:30 PM - 2:45 PM

[20p-S423-4] High Speed Crystallization and Continuous Growth of Silicon Thin Films Induced by High Power Atmospheric Pressure Thermal-Plasma-Jet Irradiation

〇Ryosuke Nakashima¹, Hiroaki Hanahusa², Seiichiro Higashi² (1.Hiroshima Univ., 2.Adsm)

2:45 PM - 3:00 PM

[20p-S423-5] Characteristics of SPC Si-TFT fabricated by using YSZ crystallization induction layer and two-step irradiation method of pulsed laser

〇Susumu Horita¹, Lien Mai¹ (1.Jap. Adv. Inst. Sci. & Tech.)

3:00 PM - 3:15 PM

[20p-S423-6] (100) Oriented Crystallization of Silicon Film by CW Laser Annealing on Amorphous Substrate

〇(M2)Yoshiaki Nieda¹, Nobuo Sasaki², Daisuke Hishitani¹, Masahiro Horita³, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech., 2.Japan Women's Univ., 3.Kyoto Univ.)

3:15 PM - 3:30 PM

△ [20p-S423-7] Multi-shots ELA of sputtered Si film and TFT with metal source-drain structure

〇Taisei Harada¹, Futa Gakiya¹, Takuya Ashitomi¹, Tatsuya Okada¹, Takashi Noguchi¹, Kanji Noda², Akira Suwa^2,3, Hiroshi Ikenoue³, Tetsuo Okuyama⁴ (1.Univ. of the Ryukyus, 2.GiGAPHOTON Inc., 3.Kyusyu Univ., 4.TOYOBO Co.Ltd)

3:30 PM - 3:45 PM

[20p-S423-8] Realization of p-channel TFT performance with metal source-drain using BLDA aiming for low-cost CMOS

〇Taisei Harada¹, Takuya Ashitomi¹, Tatsuya Okada¹, Takashi Noguchi¹, Nshikata Osamu², Atsushi Oota² (1.Univ. of the Ryukyus, 2.ULVAC Inc.)

3:45 PM - 4:00 PM

△ [20p-S423-9] Optimization of PN Junction Solar Cell’s Hydrogen Annealing

〇Tianxi Yang¹, Huang Wei¹, Jin Suzuki¹, Tatsuya Okada¹, Takashi Noguchi¹, Naoya Kawamoto² (1.Univ. of the Ryukyus, 2.Yamaguchi Univ.)

4:00 PM - 4:15 PM

[20p-S423-10] Calculation of Temperature Distribution in Si Films on Polyimide

〇Tatsuya Okada¹, Yusuke Shizu¹, Takashi Noguchi¹ (1.Univ. Ryukyus)

4:30 PM - 4:45 PM

[20p-S423-11] An Application of Excimer Laser Annealing in Low-Voltage Power MOSFETs Process

〇YI CHEN¹, Tatsuya Okada¹, Takashi Noguchi¹, Fulvio MAZZAMUTO², Karim HUET² (1.Univ. of the Ryukyus, 2.SCREEN Semiconductor Solutions Co., Ltd)

4:45 PM - 5:00 PM

▲ [20p-S423-12] Microwave Rapid Heating Used for Diffusing Impurities in Silicon

〇Kosuke Ota¹, Shunsuke Kimura¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹, Ayuta Suzuki², Mitsuru Ushijima² (1.TUAT, 2.TEL)

5:00 PM - 5:15 PM

[20p-S423-13] High activation in n+/p Ge and formation of shallow junction by Flash Lamp Anneal(FLA)

〇Hideaki Tanimura¹, Hikaru Kawarazaki¹, Yukio Ono¹, Takahiro Yamada¹, Shinichi Kato¹, Takayuki Aoyama¹, Ippei Kobayashi¹ (1.SCREEN Semiconductor Solutions)

5:15 PM - 5:30 PM

▼ [20p-S423-14] High On-to-Off Ratio Ge n⁺p Junctions by Peripheral Passivation Control

〇(P)Chi Liu¹, Hiroki Ikegaya¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

5:30 PM - 5:45 PM

△ [20p-S423-15] Crystallinity Evaluation Profile of Low Temperature Polycrystalline Silicon Thin Film
Using Raman Spectroscopy and Imaging

〇ryo yokogawa¹, Kazuya Takahashi², Katsuhiko Komori², Yoshihiro Hirota³, Naomi Sawamoto¹, Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Electron Tohoku Ltd., 3.Tokyo Electron Ltd.)

5:45 PM - 6:00 PM

[20p-S423-16] Improvement of Yield in SOI Layer Transfer to PET substracte

〇Ryutatsu Mizukami¹, Akitoshi Nakagawa², Kazuki Hiramatsu², Shinji Takeshima², Tomonori Yamashita¹, Seiichiro Higashi² (1.Hiroshima Univ., 2.Adsm.)

6:00 PM - 6:15 PM

[20p-S423-17] Characterization of defects induced by ion implantation in germanium by DLTS

〇Hiroki Ikegaya¹, Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

6:15 PM - 6:30 PM

[20p-S423-18] Single Crystalline Si Solar Cell with Sputter Epitaxially Grown p⁺Emitter

〇Hikaru Moriyama¹, Wenchang Yeh¹ (1.Shimane Univ.)

6:30 PM - 6:45 PM

▲ [20p-S423-19] Low Temperature Cat-Doping of Phosphorous Atoms into Crystalline Silicon through Ultrathin SiO₂ Layer

〇(P)ThiCamTu Huynh¹, Koichi Koyama¹, Shigeki Terashima¹, Hideki Matsumura¹ (1.JAIST)

Session information

[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

△ [20p-S423-1] Fabrication of single-crystalline LLPE-GeSn layer on quartz substrate by rapid thermal annealing and its MOSFET characteristics

[20p-S423-2] Crystallization and Activation of P+ dope a-Ge film by Atmospheric Pressure Micro-Thermal-Plasma-Jet

△ [20p-S423-3] Self-Aligned Planar Metal Double Gate Low-Temperature thin Poly-Ge TFTs on a Glass Substrate

[20p-S423-4] High Speed Crystallization and Continuous Growth of Silicon Thin Films Induced by High Power Atmospheric Pressure Thermal-Plasma-Jet Irradiation

[20p-S423-5] Characteristics of SPC Si-TFT fabricated by using YSZ crystallization induction layer and two-step irradiation method of pulsed laser

[20p-S423-6] (100) Oriented Crystallization of Silicon Film by CW Laser Annealing on Amorphous Substrate

△ [20p-S423-7] Multi-shots ELA of sputtered Si film and TFT with metal source-drain structure

[20p-S423-8] Realization of p-channel TFT performance with metal source-drain using BLDA aiming for low-cost CMOS

△ [20p-S423-9] Optimization of PN Junction Solar Cell’s Hydrogen Annealing

[20p-S423-10] Calculation of Temperature Distribution in Si Films on Polyimide

[20p-S423-11] An Application of Excimer Laser Annealing in Low-Voltage Power MOSFETs Process

▲ [20p-S423-12] Microwave Rapid Heating Used for Diffusing Impurities in Silicon

[20p-S423-13] High activation in n+/p Ge and formation of shallow junction by Flash Lamp Anneal(FLA)

▼ [20p-S423-14] High On-to-Off Ratio Ge n⁺p Junctions by Peripheral Passivation Control

△ [20p-S423-15] Crystallinity Evaluation Profile of Low Temperature Polycrystalline Silicon Thin Film
Using Raman Spectroscopy and Imaging

[20p-S423-16] Improvement of Yield in SOI Layer Transfer to PET substracte

[20p-S423-17] Characterization of defects induced by ion implantation in germanium by DLTS

[20p-S423-18] Single Crystalline Si Solar Cell with Sputter Epitaxially Grown p⁺Emitter

▲ [20p-S423-19] Low Temperature Cat-Doping of Phosphorous Atoms into Crystalline Silicon through Ultrathin SiO₂ Layer

Authentication

Session information

[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

△ [20p-S423-1] Fabrication of single-crystalline LLPE-GeSn layer on quartz substrate by rapid thermal annealing and its MOSFET characteristics

△ [20p-S423-3] Self-Aligned Planar Metal Double Gate Low-Temperature thin Poly-Ge TFTs on a Glass Substrate

△ [20p-S423-7] Multi-shots ELA of sputtered Si film and TFT with metal source-drain structure

△ [20p-S423-9] Optimization of PN Junction Solar Cell’s Hydrogen Annealing

▲ [20p-S423-12] Microwave Rapid Heating Used for Diffusing Impurities in Silicon

▼ [20p-S423-14] High On-to-Off Ratio Ge n+p Junctions by Peripheral Passivation Control

△ [20p-S423-15] Crystallinity Evaluation Profile of Low Temperature Polycrystalline Silicon Thin FilmUsing Raman Spectroscopy and Imaging

▲ [20p-S423-19] Low Temperature Cat-Doping of Phosphorous Atoms into Crystalline Silicon through Ultrathin SiO2 Layer

Authentication

▼ [20p-S423-14] High On-to-Off Ratio Ge n⁺p Junctions by Peripheral Passivation Control

△ [20p-S423-15] Crystallinity Evaluation Profile of Low Temperature Polycrystalline Silicon Thin Film
Using Raman Spectroscopy and Imaging

▲ [20p-S423-19] Low Temperature Cat-Doping of Phosphorous Atoms into Crystalline Silicon through Ultrathin SiO₂ Layer