Ryosuke Nakashima

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 1:45 PM - 6:45 PM S423 (S4)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[20p-S423-1~19] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

2:30 PM - 2:45 PM

[20p-S423-4] High Speed Crystallization and Continuous Growth of Silicon Thin Films Induced by High Power Atmospheric Pressure Thermal-Plasma-Jet Irradiation

〇Ryosuke Nakashima¹, Hiroaki Hanahusa², Seiichiro Higashi² (1.Hiroshima Univ., 2.Adsm)