naoki kato

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

3:30 PM - 3:45 PM

[21p-W541-7] Breakdown and C-V Characteristics in Normally-off GaN HEMT under Diode Operation

〇naoki kato¹, nagai takaya¹, narita tomotaka¹, osada yamato², kamimura ryuichiro², ito kenji³, wakejima akio¹, egawa takashi¹ (1.Nagoya Inst. of Tech, 2.ULVAC, 3.Kanazawa Inst. of Tech)

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