The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

3:30 PM - 3:45 PM

[21p-W541-7] Breakdown and C-V Characteristics in Normally-off GaN HEMT under Diode Operation

〇naoki kato1, nagai takaya1, narita tomotaka1, osada yamato2, kamimura ryuichiro2, ito kenji3, wakejima akio1, egawa takashi1 (1.Nagoya Inst. of Tech, 2.ULVAC, 3.Kanazawa Inst. of Tech)

Keywords:GaN,HEMT