11:00 AM - 11:15 AM
[22a-W321-8] High-quality a-Si:H deposited at low-temperature by thermally energized film-precursors
〇Chisato Niikura1, Sichanugrist Porponth2, Shinsuke Miyajima3, Yukimi Ichikawa2, Makoto Konagai2,4 (1.NIMS, 2.FUTURE-PV, JST, 3.Tokyo Tech, 4.Tokyo City Univ.)