Takahiro Yamada

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

9:45 AM - 10:00 AM

[22a-W541-4] Investigation of Thermal Oxidation Process in Low-defect Density GaN Substrate

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Kenta Watanabe¹, Mikito Nozaki¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)

10:00 AM - 10:15 AM

[22a-W541-5] Improvement of MOS Interface Properties by Thermal Oxidation of GaN Surface

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Kenta Watanabe¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

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