[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

[22a-W541-5] Improvement of MOS Interface Properties by Thermal Oxidation of GaN Surface

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Kenta Watanabe¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:GaN,Thermal oxidation